| PART |
Description |
Maker |
| AT25DF041A-SSHF-B AT25DF041A-SSHF-T AT25DF041A-SSH |
4-megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|
| AT45DB011D-SSH-B AT45DB011D09 AT45DB011D-SSH-T AT4 |
1-megabit 2.7-volt Minimum DataFlash
|
聚兴科技股份有限公司
ATMEL Corporation
|
| AT25DF081-SSHN-B AT25DF081-SSHN-T AT25DF081 AT25DF |
8-megabit 1.65-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|
| AT25DF021-MH-T AT25DF021-MH-Y AT25DF021-MHF-Y AT25 |
2-Megabit 2.3Volt or 2.7-Volt Minimum SPI Serial Falsh Memory
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot
From old datasheet system
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| L640MB10PI L640MB10NI L640MB11PI L640MB12NI L640MB |
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 64兆位个M x 16八米× 8位）的MirrorBit.0伏，只引导扇区闪
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 64兆位M x 16八米× 8位）MirrorBit.0伏，只引导扇区闪
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
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